Gallium nitride (GaN) is a material that can handle high
levels of heat, power, and frequency better than conventional semiconductors
like silicon or gallium arsenide. GaN semiconductors are increasingly being
used in wireless communication devices, radar and satellite communication
systems due to their ability to operate at high frequencies, temperatures, and
voltages. They provide high efficiency and enhance the performance of
electronic devices. GaN power semiconductors are also being used in power
supplies, energy storage systems, electric vehicles and consumer electronics
due to their high breakdown voltage which allows more compact power conversion
equipment. The global GaN Semiconductor Market is estimated to be valued at US$
3 Billion in 2024 and is expected to exhibit a CAGR of 18.% over the forecast period 2024 to 2031, as highlighted
in a new report published by Coherent Market Insights.
Market key trends:
The increased demand for wireless communication devices has accelerated the
demand for GaN semiconductors over the forecast period. GaN semiconductor
devices are used to enhance the performance of wireless infrastructure
including 5G networks by enabling higher bandwidth and larger connectivity. 5G
networks require power amplifiers and radio frequency integrated circuits
operating at millimeter-wave frequencies, an area where GaN excels compared to
other materials. GaN devices can support network densification with more base
stations and transmitters due to their improved efficiency. This has propelled
the growth of the GaN semiconductor market.
Segment
Analysis
The global
GaN semiconductor market is segmented into devices and services. The devices
segment dominates the market currently due to wide usage of GaN devices in RF
power, power supply and conversion, lighting and display, EV charging
infrastructure and other applications. LED lighting and RF power device
sub-segments hold the major market share under the devices segment. LED
lighting sub-segment dominates owing to high adoption of LED lighting across
residential, commercial and industrial sectors.
Key Takeaways
The
global
GaN semiconductor market analysis is expected to witness high growth
during the forecast period of 2024 to 2031. With increasing demand for energy
efficient and high-speed charging solutions, the market is poised to grow
substantially.
Regional analysis:
The Asia Pacific region holds the largest market currently
due to high demand for power applications and consumer electronics from China,
Japan, South Korea and other developing countries. The region is expected to
continue its dominance in the forthcoming years supported by technological
advancements in end-use industries and strong government support.
Key players
operating in the GaN Semiconductor market are Cree,
Infineon, Qorvo, Macom, Microsemi, Mitsubishi Electric, Efficient Power
Conversion (EPC), GaN Systems, Nichia, Epigan, Samsung, Analog Devices,
Panasonic, Texas Instruments, Ampleon. Among these, Cree, EPC, Qorvo and GaN
Systems are spearheading the growth and enabling mass adoption of GaN
semiconductors across industries with their innovative product portfolio and
dedicated focus on GaN technology development.
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